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| E L E C T R O N I C CH521S-30PT Schottky Rectifier - 0.2Amp 30Volt Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency -High current capability, low forward voltage drop -For use in low voltage high frequency inverters, free wheeling and polarity protection application -High temperature soldering guaranteed -High reliability -High surge current capability -Epitaxial construction -Lead free device -ESD sensitive product handling required SOD-523 .013(0.35) .009(0.25) .033(0.85) .029(0.75) .051(1.30) .043(1.10) .030(0.77) .019(0.50) .006(0.17) .002(0.07) Mechanical data -CaseMolded plastic -EpoxyUL 94V-0 rate flame retardant -TerminalsSolder plated, solderable per MIL-STD-750,method 2026 -PolarityColor band denotes cathode end .015(0.40) .066(1.70) .059(1.50) Maximum ratings and Electrical characteristics TYPE Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward urge Current, 8.3ms single half sine-wave Maximum Instantaneous Forward Voltage at IF = 200mA Maximum Average Reverse Current at VR = 10V Typical Junction Capacitance between Terminal (Note 1) Operating Temperature Range Storage Temperature Range Note: Measured at 1.0 MHz and applied reverse voltage of 10.0 volts SYMBOL VRRM VRMS VDC IO IFSM VF IR CJ TJ TSTG CH521S-30PT 30 21 30 0.2 1.0 0.5 30 14 125 -40 - 125 UNIT V V V A A V A pF C C August 2007 / Rev.5 http:// www.sirectsemi.com 1 CH521S-30PT 1 10m Ta = 125 100m 1m FORWARD CURRENT , (A) REVERSE CURRENT , (A) 75 100u 25 10m 12 5 Ta = 1m 10u 75 25 100u 1u -25 100n 10u -25 1u 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10n 0 10 20 30 FORWARD VOLTAGE , (V) REVERSE VOLTAGE , (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 100 0.5 AVERAGE FORWARD CURRENT , (A) 12 JUNCTION CAPACITANCE , (pF) 0.4 0.3 10 0.2 f = 1MHz 0.1 1 0 2 4 6 8 10 0 0 25 50 75 100 125 150 REVERSE VOLTAGE , (V) AMBIENT TEMPERATURE , Figure 3. Typical Junction Capacitance Figure 4. Forward Current Derating Curve Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: sgc@sirectsemi.com France: ss@sirectsemi.com Taiwan: se@sirectsemi.com Hong Kong: hk@sirectsemi.com China: st@sirectsemi.com ...Thailand: th@sirectsemi.com Philippines: aiac@sirectsemi.com Belize: belize@sirectsemi.com http:// www.sirectsemi.com 2 |
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